Substrate Material List
Type High Temperature Superconducting(HTS) Thin Film Substrate Magnetic and Ferroelectricity Thin Film Substrate GaN Epitaxial Thin Film Substrate...
Substrate Material List
Type High Temperature Superconducting(HTS) Thin Film Substrate Magnetic and Ferroelectricity Thin Film Substrate GaN Epitaxial Thin Film Substrate Semiconductor Substrate Halide Crystal Substrate Material LaAlO3 , LSAT, SrTiO3 , MgO , YSZ, KTaO3, SrLaAlO4, YAlO3, MgAl2O4 LaAlO3 , LSAT, SrTiO3 , Nb:SrTiO3, Fe:SrTiO3, Nd:SrTiO3, Al2O3 , MgAl2O4 , GGG , TiO2, TGG Al2O3 , Si, GaAs, LiAlO2, MgAl2O4 , SiC, ZnO, GaN Si, Ge,...
- ManufacturerOST Photonics
- CategoryCrystal Wafer and Substrate
- Lead TimeQuoted per order
- CustomizationSize, orientation and surface finish to drawing
OST Photonics supply all types of single crystal materials and substrates for researchers and industries, the table below lists the materials we can supply.
(1) High Temperature Superconducting(HTS) Thin Film Substrate
| Material | Structure | Orientation | Melting Point | Density | Hardness | Index of Refraction | Thermal Expansion Coefficient (/K) | Dielectric Constants | Maximum Size | Typical Size |
| LaAlO3 | ≈Cubica=3.821Å | <100><110><111> | 2100℃ | 6.52 g/cm3 | 6.5 Mohs | 1.80 | 9.2 x 10^-6 | 24.5 | Φ3″ | Φ3″ x 0.5 mmΦ2″ x 0.5 mm10 x 10 x 0.5 mm |
| LSAT(LaAlO3)0.3 (Sr2AlTaO8)0.7 | Cubica=3.868Å | <100><110><111> | 1840℃ | 6.74 g/cm3 | 6.5 Mohs | 10 x 10^-6 | 22 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm | |
| SrTiO3 | Cubica=3.90Å | <100><110><111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm10 x 5 x 0.5 mm |
| MgO | Cubica=4.216Å | <100><110><111> | 2852℃ | 3.58 g/cm3 | 5.5~6 Mohs | 1.58 | 12.8 x 10^-6 | 9.80 | 50 x 50 mm | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
| YSZ | Cubicc=5.125Å | <100><110><111> | 2500℃ | 5.80 g/cm3 | 7 Mohs | 1.96 | 10.3 x 10^-6 | 27 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
| KTaO3 | Cubica=3.984Å | <100><110><111> | 1352℃ | 7.03 g/cm3 | 6 Mohs | 2.00 | 4.03 x 10^-6 | 20 x 20 mm | 20 x 20 x 0.5 mm10 x 10 x 0.5 mm10 x 5 x 0.5 mm | |
| SrLaAlO4 | M4a=3.756Åc=12.63Å | <001> | 1650℃ | 5.92 g/cm3 | 6 Mohs | <100> 10.05 x 10^-6<001> 18.9 x 10^-6 | 16.8 | Φ20 mm | 10 x 10 x 0.5 mm10 x 5 x 0.5 mm | |
| YAlO3 | Orthorhombica=5.1796Åb=5.3286Åc=7.3706Å | <100><010><001> | 1870℃ | 5.37 g/cm3 | 8.5 Mohs | 4.2 x 10^-6//a 11.7 x 10^-6//b5.1 x 10^-6//c | Φ30 mm | 10 x 10 x 0.5 mmΦ30 x 0.5 mm | ||
| MgAl2O4 | Cubica=8.083Å | <100><110><111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 1.71 | 9.65 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
(2) Magnetic and Ferroelectricity Thin Film Substrate
| Material | Structure | Orientation | Melting Point | Density | Hardness | Index of Refraction | Thermal Expansion Coefficient (/K) | Dielectric Constants | Maximum Size | Typical Size |
| LaAlO3 | ≈Cubica=3.821Å | <100><110><111> | 2100℃ | 6.52 g/cm3 | 6.5 Mohs | 1.80 | 9.2 x 10^-6 | 24.5 | Φ3″ | Φ3″ x 0.5 mmΦ2″ x 0.5 mm10 x 10 x 0.5 mm |
| LSAT(LaAlO3)0.3 (Sr2AlTaO8)0.7 | Cubica=3.868Å | <100><110><111> | 1840℃ | 6.74 g/cm3 | 6.5 Mohs | 10 x 10^-6 | 22 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm | |
| SrTiO3 | Cubica=3.90Å | <100><110><111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm10 x 5 x 0.5 mm |
| Nb:SrTiO3Fe:SrTiO3Nd:SrTiO3 | Cubica=3.90Å | <100><110><111> | 2050℃ | 5.175 g/cm3 | 6 Mohs | 2.409 | 10.4 x 10^-6 | 300 | Φ30 mm | 10 x 10 x 0.5 mm10 x 5 x 0.5 mm |
| Al2O3 | M6a=4.758Åc=12.99Å | <0001><11-20><10-10><1-102> | 2040℃ | 3.97 g/cm3 | 9 Mohs | 1.77 | 7.50 x 10^-6 | [email protected]@C-axis | Φ180 mm | Φ50.8 x 0.5 mmΦ100 x 0.5 mm 10 x 10 x 0.5 mm |
| MgAl2O4 | Cubica=8.083Å | <100><110><111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 1.71 | 7.45 x 10^-6 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm | |
| GGG | Cubica=12.37Å | <100><110><111> | 1860℃ | 7.05 g/cm3 | 6~7 Mohs | 1.95 | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm | ||
| TiO2 | M4a=4.593Åc=2.958Å | <100><001><110><111> | 1840℃ | 4.26 g/cm3 | 7 Mohs | 2.72 | Φ23~25 mm | 10 x 10 x 0.5 mm10 x 5 x 0.5 mm | ||
| TGG | Cubica=12.355Å | <100><110><111> | 1725℃ | 7.13 g/cm3 | 8 Mohs | 1.954 | Φ30 mm | Φ30 x 0.5 mm10 x 10 x 0.5 mm5 x 5 x 10 mm |
(3) GaN Epitaxial Thin Film Substrate
| Material | Structure | Orientation | Melting Point | Density | Hardness | Thermal Expansion Coefficient (/K) | Lattice Mismatch for GaN | Maximum Size | Typical Size |
| Al2O3 | M6a=4.758Åc=12.99Å | <0001><11-20><10-10><1-102> | 2040℃ | 3.97 g/cm3 | 9 Mohs | 7.50 x 10^-6 | 16.1%@<0001> | Φ180 mm | Φ50.8 x 0.5 mmΦ100 x 0.5 mm 10 x 10 x 0.5 mm |
| Si | Cubica=5.0430Å | <100><110><111> | 1415℃ | 2.33 g/cm3 | 5.5~6 Mohs | 2.59 x 10^-6 | 20.5%@<111> | 50 x 50 mm | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
| GaAs | Cubica=5.653Å | <100> | 1238℃ | 5.31 g/cm3 | 6.5 Mohs | 5.75 x 10^-6 | 19.9%@<111> | Φ4″ | Φ4″ x 0.625mmΦ2″ x 0.35mm |
| LiAlO2 | M4a=5.17Åc=6.26Å | <100><001><110><111> | 1900℃ | 2.62 g/cm3 | 7.5 Mohs | 7.1 x 10^-6 | 1.4%@<100> | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
| MgAl2O4 | Cubica=8.083Å | <100><110><111> | 2130℃ | 3.60 g/cm3 | 7.5~8 Mohs | 7.45 x 10^-6 | 9%@<111> | Φ2″ | Φ2″ x 0.5 mm10 x 10 x 0.5 mm |
| SiC | M6a=3.080Åc=15.12Å | <0001><11-20><10-10> | 2830℃ | 3.217 g/cm3 | 9.2 Mohs | 4.2 x 10^-6@c | 3.5%@<0001> | Φ4″ | Φ2″ x 0.33 mm10 x 10 x 0.33 mm |
| ZnO | M6a=3.325Åc=5.213Å | <0001><11-20><10-10> | 1975℃ | 5.605 g/cm3 | 4.5 Mohs | 2.92 x 10^-6@c | 2.0%@<0001> | Φ25 mm | 10 x 10 x 0.5 mm20 x 20 x 0.5 mm |
| GaN | M6a=0.3189Åc=0.5186Å | <0001> | 1700℃ | 6.1 g/cm3 | 8 Mohs | 3.17 x 10^[email protected] x 10^-6@a | 0%@<0001> | Φ2″ | Φ2″ x 0.3 mm10 x 10 x 0.3 mm |
(4) Semiconductor Substrate
| Material | Structure | Orientation | Melting Point | Density | Band Gap | Conductivity Type | Dopant | Resistivity | Maximum Size | Typical Size |
| Si | Cubica=5.0430Å | <100><110><111> | 1415℃ | 2.33 g/cm3 | 1.124 ev | N or P | undoped | >1000 Ώ.cm | Φ6″ | Φ2″ x 0.5 mmΦ3″ x 0.5 mmΦ4″ x 0.5 mm |
| N | P | 0.001~40 Ώ.cm | ||||||||
| P | B | 100~10000 Ώ.cm | ||||||||
| Ge | Cubica=5.6575Å | <100><110><111> | 937.4℃ | 5.323 g/cm3 | 0.66 ev | / | undoped | >30 Ώ.cm | Φ4″ | Φ2″ x 0.5 mmΦ3″ x 0.5 mmΦ4″ x 0.5 mm |
| N | Sb | 0.01~30 Ώ.cm | ||||||||
| P | In or Ga | 0.01~30 Ώ.cm | ||||||||
| GaAs | Cubica=5.653Å | <100> | 1238℃ | 5.31 g/cm3 | 1.424 ev | N | undoped | >10^7 Ώ.cm | Φ4″ | Φ2″ x 0.35 mmΦ4″ x 0.625 mm |
| Si | <0.1 Ώ.cm | |||||||||
| InP | Cubica=5.869Å | <100> | 1600℃ | 4.79 g/cm3 | 1.344 ev | N | undoped | Φ3″ | Φ2″ x 0.5 mmΦ3″ x 0.5 mm | |
| S or Fe | ||||||||||
| P | Zn | |||||||||
| InAs | Cubica=6.058Å | <100> | 942℃ | 5.66 g/cm3 | 0.45 ev | N | undoped | Φ3″ | Φ2″ x 0.5 mmΦ3″ x 0.5 mm | |
| S or Sn | ||||||||||
| P | Zn | |||||||||
| GaSb | Cubica=6.094Å | <100> | 712℃ | 5.53 g/cm3 | 0.67 ev | P | undoped | Φ3″ | Φ2″ x 0.5 mmΦ3″ x 0.5 mm | |
| Zn | ||||||||||
| N | Te |
(5) Halide Crystal Substrate
| Material | Structure | Orientation | Melting Point | Density | Transmission Range | Typical Size |
| NaCl | Cubica=5.642Å | <100><110><111> | 804℃ | 2.16 g/cm3 | 0.26~22 um | 10 x 10 x 2.0 mm20 x 20 x 2.0 mm |
| KCl | Cubica=6.291Å | <100><110><111> | 770℃ | 1.98 g/cm3 | 0.20~27.5 um | 10 x 10 x 2.0 mm20 x 20 x 2.0 mm |
| KBr | Cubica=5.596Å | <100><110><111> | 734℃ | 2.75 g/cm3 | 0.20~34 um | 10 x 10 x 2.0 mm20 x 20 x 2.0 mm |
Other Crystal Wafer and Substrate Materials
Request A Quote For Substrate Material List
Send us your dimensions, orientation, surface finish and quantity. Our engineers reply with a technical proposal and price.
FAQ
Buyer Questions
How do I get a quotation for the Substrate Material List?
Send the quantity, the specification and your destination port to Jiaxing AOSITE Photonics Technology Co.,Ltd. by email or telephone. There is no enquiry form on this site, so your message reaches an engineer directly rather than a contact queue.
Can the Substrate Material List be made to a custom specification?
Custom dimensions and finishes are quoted case by case against your drawing or written specification. Send what you need and the factory will confirm what is achievable, and at what tolerance, before you place the order.
Who manufactures the Substrate Material List?
Jiaxing AOSITE Photonics Technology Co.,Ltd., trading as OST Photonics, manufacturing in Jiaxing, Zhejiang, China since 2010.
Tell Us What You Need
Send your specification, quantity and destination port. Our engineers reply with a technical proposal and a confirmed lead time.