Silicon Wafer
OST Photonics offers a wide selection of silicon wafers for semiconductor industry. The wafer diameters are ranging from 2 inch (50.8mm) to 12 inch...
Silicon Wafer
OST Photonics offers a wide selection of silicon wafers for semiconductor industry. The wafer diameters are ranging from 2 inch (50.8mm) to 12 inch (300mm), and there are three crystal orientations to choose from: <100>, <111> and <110>, the thickness can also be customized according to your requirements. In addition, SOI wafers, oxide silicon wafers, customized silicon substrates and silicon ingots are also availabl...
- ManufacturerOST Photonics
- CategoryCrystal Wafer and Substrate
- Lead TimeQuoted per order
- CustomizationSize, orientation and surface finish to drawing
Silicon Wafer (Si Wafer)
Specifications of Czochralski (CZ) Silicon Wafers
| Item | Specifications | ||||||
| Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ | 12″ |
| Grade | Prime grade, Test grade, Dummy grade | ||||||
| Growth Method | CZ | ||||||
| Orientation | <100>,<111>,<110>, etc. | ||||||
| Type/Dopant | P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||
| Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 |
| Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||
| Resistivity(Ohm-cm) | 0.001-100 | ||||||
| Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | ||||||
| TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||
| Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||
| Particle | Upon Request |
Specifications of Float Zone (FZ) Silicon Wafers
| Item | Specifications | |||||
| Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ |
| Grade | Prime grade, Test grade, Dummy grade | |||||
| Growth Method | FZ | |||||
| Orientation | <100>,<111>, etc. | |||||
| Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos | |||||
| Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 |
| Thickness Tolerance | Standard ±25um | ± 50um | ||||
| Resistivity(Ohm-cm) | 1000-30000 and 1-5 | |||||
| Surface Finished | Polished/Etched, Polished/Polished, Etched/Etched, Ground/Ground | |||||
| TTV (um) | Standard < 10um | |||||
| Bow/Warp (um) | Standard < 40um | <50um | ||||
| Particle | Upon Request |
Specifications of Oxide Silicon Wafers
| Item | Specifications | ||||||
| Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8” | 12” |
| Grade | Prime grade, Test grade, Dummy grade | ||||||
| Growth Method | CZ, FZ | ||||||
| Orientation | <100>,<111>,<110>, etc. | ||||||
| Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | ||||||
| Thickness (um) | 279 | 380 | 525 | 625 | 675 | 725 | 775 |
| Thickness Tolerance | Standard ±25um, Maximum Capabilities ±5um | ± 20um | ± 20um | ||||
| Oxide Thickness (nm) | 20-2000 | ||||||
| Resistivity(Ohm-cm) | 0.001-30000 | ||||||
| Surface Finished | Polished/Etched, Polished/Polished | ||||||
| TTV (um) | Standard < 10um, Maximum Capabilities<5um | ||||||
| Bow/Warp (um) | Standard < 40um, Maximum Capabilities<20um | <40um | <40um | ||||
| Particle | Upon Request |
Specifications of Silicon Ingots
| Item | Specifications | |||||
| Diameter | 2″ | 3″ | 4″ | 5″ | 6″ | 8″ |
| Grade | Prime grade, Test grade, Dummy grade | |||||
| Growth Method | CZ, FZ | |||||
| Orientation | <100>,<111>,<110>, etc. | |||||
| Type/Dopant | Intrinsic, P-type/Boron, N-type/Phos, N-type/As, N-type/Sb | |||||
| Oxygen Content | 8-18 ppma | |||||
| Carbon Content | >1 ppma | |||||
| Resistivity(Ohm-cm) | 0.001-30000 ohm-cm | |||||
| Life Time | >50us |
Other Crystal Wafer and Substrate Materials
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